Dense plasma focus device as a promising method for thin film deposition –a numerical study of Ion beam features from Dense Plasma Focus device

Abstract

In this research, a theoretical study was conducted of the possibility of using dense plasma focus devices as one of the thin film deposition methods, by taking advantage of the distinctiveness of these devices in the formation of the plasma pinch, which is an ion source. Thenumber and energy of nitrogen ions produced by the NX2 dense plasma focus device and their changes with the change in gas pressure were found. The energy spectrum of the resulting ions was also found, the nitrogen gas pressure value was determined at which the highest energy carried by the nitrogen ion was achieved, and the number of ions reaching the titanium substrate was calculated in order to obtain the TIN thin film